2008. 4. 24 1/2
SEMICONDUCTOR
TECHNICAL DATA
BC327
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
High Current : I
C
=-800mA.
DC Current Gain : h
FE
=100 630 (V
CE
=-1V, I
c
=-100mA).
For Complementary with NPN type BC337.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
V
CB
=-45V, I
E
=0
- - -100 nA
DC Current Gain (Note)
h
FE
V
CE
=-1V, I
C
=-100mA
100 - 630
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-500mA, I
B
=-50mA
- - -0.7 V
Base-Emitter Voltage
V
BE(ON)
V
CE
=-1V, I
C
=-300mA
- - -1.2 V
Transition Frequency
f
T
V
CE
=-5V, I
C
=-10mA, f=100MHz
- 100 - MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, f=1MHz, I
E
=0
- 16 - pF
Note : h
FE
Classification none:100 630, 16:100 250, 25:160 400, 40:250 630
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-50 V
Collector-Emitter Voltage
V
CEO
-45 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-800 mA
Base Current
I
B
-200 mA
Emitter Current
I
E
800 mA
Collector Power Dissipation
P
C
625 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
