2015. 5. 12 1/2
SEMICONDUCTOR
TECHNICAL DATA
BAW56C
SILICON EPITAXIAL PLANAR DIODE
Revision No : 0
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package : SOT-23(1).
MAXIMUM RATING (Ta=25 )
1. CATHODE 1
2. CATHODE 2
3. ANODE
Lot No.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Reverse Voltage
V
R
I
R
=100uA
80 - - V
Forward Voltage
V
F(1)
I
F
=1mA
- 0.6 0.65
V
V
F(2)
I
F
=10mA
- 0.72 0.8
V
F(3)
I
F
=150mA
- - 1.25
Reverse Current
I
R
V
R
=80V
- - 0.5
A
Total Capacitance
C
T
V
R
=0, f=1MHz
- - 3 pF
CHARACTERISTIC SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage
V
RM
85 V
Reverse Voltage
V
R
80 V
Continuous Forward Current
I
F
200 mA
Surge Current (10ms)
I
FSM
2A
Power Dissipation
P
D
225* mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* Note1 : Package Mounted On FR-5 Board (25.4 19.05 1.57mm)