SOT23 SILICON PLANAR HIGH SPEED
SWITCHING SERIES DIODE PAIR
ISSUE 2 - MAY 1995
PIN CONFIGURATIONS
PARTMARKING DETAILS
BAV99...........A7
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Continuous Reverse Voltage V
R
70 V
Repetitive Peak Reverse Voltage V
RRM
70 V
Average Rectified Forward Current
( over any 20mS Period)
I
F(AV)
100 mA
Repetitive Peak Forward Current I
FRM
200 mA
Peak Forward Surge Current I
FM(SURGE)
500 mA (dc)
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Forward Voltage V
F
715
855
1.1
1.3
mV
mV
V
V
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=100mA
Reverse Current I
R
30
2.5
50
µA
µA
µA
V
R
=25V, T
amb
=150°C
V
R
=70V
V
R
=70V, T
amb
=150°C
Diode Capacitance C
D
1.5 pF f=1MHz
Forward Recovery
Voltage
V
fr
1.75 V Switched to
I
F
=10mA, t
r
=20ns
Reverse Recovery
Time
t
rr
6 ns Switched from
IF=10mA, V
R
=1V
R
L
=100Ω,I
R
=1mA
Spice parameter data is available upon request for this device
BAV99
PAGE NO
1
23
1
3
2
SOT23
Sampling Oscilloscope
C< 1.0pF
R
IN
=50
Ω
V
IN
=1V
R
S
=50
Ω
Pulse Generator
t
rr
I
F
I
R
=1mA
Recovery Time Equivalent Test Circuit
Output Waveform
1k
Ω
0.2
µ
F
V
B
0.1
µ
F
DUT
+
-
Pulse rise time < = 0.5ns
Pulse widt h = 100 ns
Oscilloscope rise time < 0.35ns
Adjust V
B
for I
F
=10mA
SWITCHING CIRCUIT
BAV99
Above switching diagram also applies to device types BAL99
BAR99
BAW56
BAV70