2011. 8. 10 1/2
SEMICONDUCTOR
TECHNICAL DATA
BAV99
SILICON EPITAXIAL PLANAR DIODE
Revision No : 2
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package : SOT-23.
Low Forward Voltag : V
F
=0.9V(Typ.).
Fast Reverse Recovery Time : t
rr
=1.6ns(Typ.).
Small Total Capacitance : C
T
=0.9pF(Typ.).
MAXIMUM RATING (Ta=25 )
1. CATHODE 1
2. ANODE 2
3. ANODE 1 / CATHODE 2
Lot No.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage
V
F(1)
I
F
=1mA
- 0.60 -
V
V
F(2)
I
F
=10mA
- 0.72 -
V
F(3)
I
F
=150mA
- - 1.25
Reverse Current
I
R
V
R
=80V
- - 0.5
A
Total Capacitance
C
T
V
R
=0, f=1MHz
- 0.9 3.0 pF
Reverse Recovery Time
t
rr
I
F
=10mA
- 1.6 4.0 nS
CHARACTERISTIC SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage
V
RM
85 V
Reverse Voltage
V
R
80 V
Continuous Forward Current
I
F
250 mA
Surge Current (10ms)
I
FSM
2 A
Power Dissipation
P
D
225*
mW
300**
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* Note1 : Package Mounted On FR-5 Board (25.4 19.05 1.57mm)
** Note2 : Package Mounted On 99.5% Alumina (10
8 0.6mm)
