2009. 1. 23 1/2
SEMICONDUCTOR
TECHNICAL DATA
BAV70T
SILICON EPITAXIAL PLANAR DIODE
Revision No : 1
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package : ESM.
Low Forward Voltage : V
F
=0.9V (Typ.).
Fast Reverse Recovery Time : t
rr
=1.6ns(Typ.).
Small Total Capacitance : C
T
=0.9pF (Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage
V
RM
85 V
Reverse Voltage
V
R
80 V
Continuous Forward Current
I
F
150 mA
Surge Current (10ms)
I
FSM
2 A
Power Dissipation
P
D
200 * mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage
V
F(1)
I
F
=1mA
- 0.60 -
V
V
F(2)
I
F
=10mA
- 0.72 -
V
F(3)
I
F
=150mA
- - 1.25
Reverse Current
I
R
V
R
=80V
- - 0.5
A
Total Capacitance
C
T
V
R
=0, f=1MHz
- - 3.0 pF
Reverse Recovery Time
t
rr
I
F
=10mA
- - 4.0 nS
Note : * Package Mounted On FR-5 Board (25.4 19.05 1.57mm)
