2009. 1. 23 1/2
SEMICONDUCTOR
TECHNICAL DATA
BAV23S
SILICON EPITAXIAL PLANAR DIODE
Revision No : 1
High Voltage Switching.
FEATURES
High Reliability.
Small surface mounting type (SOT-23).
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P
7
2
1
3
+
_
1. CATHODE 1
2. ANODE 2
3. ANODE 1/ CATHODE 2
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage
V
RM
300 V
Reverse Voltage
V
R
250 V
Continuous Forward Current
I
F
200 mA
Surge Current (10mS)
I
FSM
2 A
Power Dissipation
P
D
225*
mW
300**
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Type Name
Marking
Lot No.
J C
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage
V
F
I
F
=150mA
- - 1.25 V
Reverse Current
I
R(1)
V
R
=250V
- - 0.2
A
I
R(2)
V
R
=300V
- - 100
Total Capacitance
C
T
V
R
=0V, f=1MHz
- - 3 pF
Reverse Recovery Time
t
rr
I
R
=30mA, I
F
=30mA
- - 100 nS
* Note1 : Package Mounted On FR-5 Board (25.4 19.05 1.57mm)
** Note2 : Package Mounted On 99.5% Alumina (10
8 0.6mm)
