SOT23 SILICON EPITAXIAL
SCHOTTKY BARRIER DIODES
ISSUE 1 SEPTEMBER 1995 ✪
FEATURES: Low V
F
& High Current Capability
APPLICATIONS: PSU, Mobile Telecomms & SCSI
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Continuous Reverse Voltage V
R
30 V
Forward Current I
F
200 mA
Forward Voltage @ I
F
=10mA V
F
400 mV
Repetitive Peak Forward Current I
FRM
300 mA
Non Repetitive Forward Current t<1s I
FSM
600 mA
Power Dissipation at T
amb
=25°C P
tot
330 mW
Storage Temperature Range T
stg
-55 to +150 °C
JunctionTemperature ¤ T
j
125 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage
V
(BR)R
30 50 V
I
R
=10µA
Forward Voltage V
F
135
200
280
350
530
240
320
400
500
1000
mV
mV
mV
mV
mV
I
F
=0.1mA
I
F
=1mA
I
F
=10mA
I
F
=30mA
I
F
=100mA
Reverse Current I
R
2.5 4
µA
V
R
=25V
Diode Capacitance C
D
7.5 10 pF f=1MHz,V
R
=1V
Reverse Recover
Time
t
rr
5nsswitched from
I
F
=10mA to I
R
=10mA
R
L
=100Ω, Measured
at I
R
=1mA
¤ Dual Device; For simultaneous continuous use T
j
=100°C.
BAT54 SERIES
1
3
2
BAT54 BAT54A BAT54S BAT54C Device Type
SINGLE COMMON
ANODE
SERIES COMMON
CATHODE
Pin Configuration
L4Z L42 L44 L43 Partmarking Detail
TA - Ambient Temperature ( °C)
PD v TA Characteristics
CT v VR Characteristics
Forward Voltage V
F
(V)
IF v VF Characteristics
µ
µ
µ
µ
Reverse Voltage V
R
(V)
IR v VR Characteristics
Reverse Voltage VR (V)
µ
TYPICAL CHARACTERISTICS
BAT54 SERIES
3 - 43 - 5
