SOT23 SILICON HIGH
SPEED SWITCHING DIODE
ISSUE 2 JANUARY 1995
PIN CONFIGURATION
PARTMARKING DETAILS
BAS19 A8
BAS20 A81
BAS21 A82
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL BAS19 BAS20 BAS21 UNIT
Continuous Reverse Voltage V
R
100 150 200 V
Repetative Peak Reverse Voltage V
RRM
120 200 250 V
Average Forward Rectified Current I
F(AV)
200 mA
Forward Current I
F
200 mA
Repetative Peak Forward Current I
FRM
625 mA
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse
Breakdown
Voltage
V
(BR)
BAS19 120 V
I
R
=100µA (1)
BAS20 200 V
I
R
=100µA (1)
BAS21 250 V
I
R
=100µA (2)
Reverse Current I
R
100
100
nA
µA
V
R
=V
R
max
V
R
=V
R
max, T
J
=150°C
Static Forward Voltage V
F
1.00
1.25
IF=100mA
I
F
=200mA
Differential Resistance r
diff
5
Ω
I
F
=10mA
Diode Capacitance C
d
5pFf=1MHz
Reverse Recovery Time t
rr
50 ns I
F
=30mA to I
R
=30mA
R
L
=10Ω measured at I
R
=3mA
(1) Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
(2) At zero life time, measured under pulse conditions to avoid excessive dissipation and voltage
limited to 275V
Spice parameter data is available upon request for this device
BAS19
BAS20
BAS21
PAGE NO
1
3
2
SOT23
BAS19
BAS20
BAS21
SWITCHING TIME TEST DATA
Sampling Oscilloscope
R
IN
=50Ω
DUT
R
S
=50
Ω
Pulse Generator
t
rr
+I
F
t
I
R*
t
p(tot)
t
p
90%
10%
90%
V
Recovery Time Equivalent Test Circuit
Input Signal Output Signal
Input Signal
Total Pulse Duration t
p(tot)
2µs
Duty Factor
δ
0.0025
Rise Time of Reverse
Pulse
t
r
0.6ns
Reverse Pulse Duration t
p
100ns
Oscilloscope
Rise Time t
r
0.35ns
Circuit Capacitance* C <1pF
