SOT23 SILICON PLANAR HIGH
SPEED SWITCHING DIODES
ISSUE 2 - JUNE 1995
PIN CONFIGURATIONS
PARTMARKING DETAILS
BAL99 - E2
BAR99 - E3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Continuous Reverse Voltage V
R
70 V
Repetitive Peak Reverse Voltage V
RRM
70 V
Average Rectified Forward Current
( over any 20mS Period)
I
F(AV)
100 mA
Repetitive Peak Forward Current I
FRM
200 mA
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Forward Voltage V
F
715
855
1.1
1.3
mV
mV
V
V
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=100mA
Reverse Current I
R
30
2.5
50
µA
µA
µA
V
R
=25V, T
j
=150°C
V
R
=70V
V
R
=70V, T
j
=150°C
Diode Capacitance C
d
1.5 pF f=1MHz
Forward Recovery
Voltage
V
fr
1.75 V Switched to
I
F
=10mA, t
r
=20ns
Reverse Recovery Time t
rr
6 ns Switched from
IF=10mA, V
R
=1V
R
L
=100Ω, IR=1mA
Spice parameter data is available upon request for this device
For switching circuit information refer to BAV99 datasheet.
BAL99
BAR99
1
3
2
SOT23
BAL99
BAR99
