1999. 11. 12 1/2
SEMICONDUCTOR
TECHNICAL DATA
B10A90VIC
SCHOTTKY BARRIER TYPE DIODE STACK
Revision No : 1
SWITCHING TYPE POWER SUPPLY APPLICATION.
CONVERTER & CHOPPER APPLICATION.
FEATURES
ᴌAverage Output Rectified Current
: I
O
=10A (Tc=110ᴱ).
ᴌRepetitive Peak Reverse Voltage
: V
RRM
=90V.
ᴌFast Reverse Recovery Time : t
rr
=35ns.
ᴌLow Peak Forward Voltage : 0.70V(Typ.)
MAXIMUM RATING (Ta=25ᴱ)
DIM
MILLIMETERS
1. ANODE
2. CATHODE
3. ANODE
TO-220IS
10.30 MAX
15.30 MAX
2.70Ź0.30
0.85 MAX
Ѹ3.20Ź0.20
3.00Ź0.30
A
B
C
D
E
F
G
12.30 MAX
0.75 MAX
H
13.60Ź0.50
3.90 MAX
1.20
1.30
2.54
4.50Ź0.20
6.80
2.60Ź0.20
10Ɓ
J
K
L
M
N
O
P
Q
R
F
O
Q
1
2
3
L
P
N
B
G
J
M
D
N
T
T
H
E
R
T
V
S
K
L
U
T
S
0.5
5Ş
25Ş
2.60Ź0.15
V
U
D
A
C
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Peak Forward Voltage (Note)
V
FM
I
FM
=5A
- 0.70 0.75 V
Repetitive Peak
Reverse Current (Note)
I
RRM
V
RRM
=Rated
- - 3 mA
Reverse Recovery Time (Note)
t
rr
I
F
=1.0A, di/dt=-30A/Ὕ
- - 35 ns
Thermal Resistance (Note)
R
th(j-c)
Juction to Case - - 3.5
ᴱ/W
CHARACTERISTIC SYMBOL RATING UNIT
Repetitive Peak Reverse Voltage
V
RRM
90 V
Average Output Rectified
Current (Tc=110ᴱ) (Rated V
R
) (Note)
I
O
10 A
Peak One Cycle Surge Forward
Current (Non-Repetitive 60Hz)
I
FSM
100 A
Junction Temperature
T
j
-40ᴕ150
ᴱ
Storage Temperature Range
T
stg
-55ᴕ150
ᴱ
Note : average forward current of centertap full wave connection.
Note : A value of one cell
3
1
2