AUIRLS4030
AUIRLSL4030
HEXFET
®
Power MOSFET
D
S
G
Features
Optimized for Logic Level Drive
Advanced Process Technology
Ultra Low On-Resistance
Logic Level Gate Drive
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche rat-
ing . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
V
DSS
100V
R
DS(on)
typ.
3.4m
max
4.3m
I
D
180A
D
2
Pak
AUIRLS4030
TO-262
AUIRLSL4030
S
D
G
S
D
G
D
G D S
Gate Drain Source
Base part number Package Type
Standard Pack
Form Quantity
AUIRLSL4030 TO-262 Tube 50 AUIRLSL4030
AUIRLS4030 D
2
-Pak
Tube 50 AUIRLS4030
Tape and Reel Left 800 AUIRLS4030TRL
Orderable Part Number
1 2015-11-6
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 180
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 130
I
DM
Pulsed Drain Current 730
P
D
@T
C
= 25°C Power Dissipation 370 W
Linear Derating Factor 2.5 W/°C
V
GS
Gate-to-Source Voltage ± 16 V
E
AS
Single Pulse Avalanche Energy (Thermally limited) 305
mJ
I
AR
Avalanche Current
See Fig. 14, 15, 22a, 22b
A
E
AR
Repetitive Avalanche Energy
mJ
dv/dt Peak Diode Recovery 21
V/ns
T
J
Operating Junction and -55 to + 175
°C
T
STG
Storage Temperature Range
Soldering Temperature for 10 seconds 300(1.6mm from case)
Thermal Resistance
Symbol Parameter Typ. Max. Units
°C/W
R
JC
Junction-to-Case ––– 0.4
R
JA
Junction-to-Ambient (PCB Mount), D2 Pak ––– 40
AUTOMOTIVE GRADE
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
