AUIRLS3114Z
V
DSS
40V
R
DS(on)
typ.
3.8m
max.
4.9m
I
D (Silicon Limited)
122A
I
D (Package Limited)
56A
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Features
Advanced Process Technology
Ultra Low On-Resistance
Logic Level Gate Drive
Enhanced dv/dt and di/dt capability
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
1 2015-11-6
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 122
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 86
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Wirebond Limited) 56
I
DM
Pulsed Drain Current 488
P
D
@T
C
= 25°C Maximum Power Dissipation 143 W
Linear Derating Factor 0.95 W/°C
V
GS
Gate-to-Source Voltage ± 16 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 168
E
AS (Tested)
Single Pulse Avalanche Energy (Tested) 518
I
AR
Avalanche Current See Fig.15,16, 12a, 12b A
E
AR
Repetitive Avalanche Energy
mJ
dv/dt Peak Diode Recovery 2.3 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 1.05
°C/W
R
JA
Junction-to-Ambient (PCB Mount) ––– 40
D
2
Pak
AUIRLS3114Z
S
D
G
Base part number Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRLS3114Z D
2
-Pak
Tube 50 AUIRLS3114Z
Tape and Reel Left 800 AUIRLS3114ZTRL
G D S
Gate Drain Source
HEXFET
®
Power MOSFET
