AUIRLS3036-7P
G D S
Gate Drain Source
Base Part Number Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRLS3036-7P
Tube 50
AUIRLS3036-7P
Tape and Reel Left 800
AUIRLS3036-7TRL
D
2
Pak 7 Pin
V
DSS
60V
R
DS(on)
typ.
1.5m
max.
1.9m
I
D (Silicon Limited)
300A
I
D (Package Limited)
240A
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Features
Advanced Process Technology
Ultra Low On-Resistance
Logic Level Gate Drive
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
1 2015-11-4
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 300
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 210
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited) 240
I
DM
Pulsed Drain Current 1000
P
D
@T
C
= 25°C Maximum Power Dissipation 380 W
Linear Derating Factor 2.5 W/°C
V
GS
Gate-to-Source Voltage ± 16 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 300
mJ
I
AR
Avalanche Current See Fig.14,15, 22a, 22b A
E
AR
Repetitive Avalanche Energy
mJ
dv/dt Peak Diode Recovery 8.1 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 0.40
°C/W
R
JA
Junction-to-Ambient ––– 40
D
2
Pak 7 Pin
AUIRLS3036-7P
HEXFET
®
Power MOSFET
