AUIRLR2703
V
DSS
30V
R
DS(on)
max.
45m
I
D (Silicon Limited)
23A
I
D (Package Limited)
20A
Features
Advanced Planar Technology
Logic Level Gate Drive
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety of other
applications.
1 2015-12-11
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 23
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 16
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited) 20
I
DM
Pulsed Drain Current 96
P
D
@T
C
= 25°C Maximum Power Dissipation 45 W
Linear Derating Factor 0.30 W/°C
V
GS
Gate-to-Source Voltage ± 16 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 77
E
AS (tested)
Single Pulse Avalanche Energy (tested Value) 200
I
AR
Avalanche Current 14 A
E
AR
Repetitive Avalanche Energy 4.5 mJ
dv/dt Peak Diode Recovery 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
mJ
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 3.3
°C/W
R
JA
Junction-to-Ambient ( PCB Mount) ––– 50
R
JA
Junction-to-Ambient ––– 110
D-Pak
AUIRLR2703
Base part number Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRLR2703 D-Pak
Tube 75 AUIRLR2703
Tape and Reel Left 3000 AUIRLR2703TRL
G D S
Gate Drain Source
S
G
D
HEXFET
®
Power MOSFET
