AUIRLL024Z
V
DSS
55V
R
DS(on)
typ.
48m
I
D
5.0A
max.
60m
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide
variety of other applications.
Features
Advanced Process Technology
Ultra Low On-Resistance
Logic Level Gate Drive
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
1 2015-10-29
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V 5.0
A
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V 4.0
I
DM
Pulsed Drain Current 40
P
D
@T
A
= 25°C Maximum Power Dissipation (PCB Mount) 2.8
W
P
D
@T
A
= 25°C Maximum Power Dissipation (PCB Mount) 1.0
Linear Derating Factor (PCB Mount) 0.02 W/°C
V
GS
Gate-to-Source Voltage ± 16 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 21
E
AS (Tested)
Single Pulse Avalanche Energy (Tested Value) 38
I
AR
Avalanche Current See Fig. 12a, 12b, 15, 16 A
E
AR
Repetitive Avalanche Energy
mJ
T
J
Operating Junction and -55 to + 150
°C
T
STG
Storage Temperature Range
mJ
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
°C/W
R
JA
Junction-to-Ambient (PCB Mount, steady state)
–––
45
R
JA
Junction-to-Ambient (PCB Mount, steady state)
–––
120
S
G
SOT-223
AUIRLL024Z
D
Base part number Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRLL024Z SOT-223 Tape and Reel 2500 AUIRLL024ZTR
G D S
Gate Drain Source
D
HEXFET
®
Power MOSFET
