AUIRLL024N
V
DSS
55V
R
DS(on)
max.
0.065
I
D
3.1A
Description
Specifically designed for Automotive applications, this Cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
Features
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
1 2015-10-29
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V 4.4
A
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V 3.1
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V 2.5
I
DM
Pulsed Drain Current 12
P
D
@T
A
= 25°C Maximum Power Dissipation (PCB Mount) 2.1
P
D
@T
A
= 25°C Maximum Power Dissipation (PCB Mount) 1.0
Linear Derating Factor (PCB Mount) 8.3 W/°C
V
GS
Gate-to-Source Voltage ± 16 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 120
mJ
I
AR
Avalanche Current 3.1 A
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
Operating Junction and -55 to + 150
°C
T
STG
Storage Temperature Range
W
E
AR
Repetitive Avalanche Energy 0.1 mJ
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
°C/W
R
JA
Junction-to-Ambient (PCB Mount, steady state) 90 120
R
JA
Junction-to-Ambient (PCB Mount, steady state) 50 60
S
G
SOT-223
AUIRLL024N
D
Base part number Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRLL024N SOT-223 Tape and Reel 2500 AUIRLL024NTR
G D S
Gate Drain Source
D
HEXFET
®
Power MOSFET
