AUIRL7732S2TR
Base Part Number Package Type
Standard Pack
Form Quantity
AUIRL7732S2
DirectFET Small Can
Tape and Reel 4800
AUIRL7732S2TR
Orderable Part Number
AUTOMOTIVE GRADE
V
(BR)DSS
40V
R
DS(on)
typ.
5.0m
I
D (Silicon Limited)
58A
max.
6.6m
Q
g (typical)
22nC
DirectFET
®
ISOMETRIC
SC
Automotive DirectFET
®
Power MOSFET
Applicable DirectFET
®
Outline and Substrate Outline
SB SC M2 M4 L4 L6 L8
Description
The AUIRL7732S2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to
achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint which is 38% smaller than an SO-8 and only
0.7mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and
processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging
platform coupled with the latest silicon technology allows the AUIRL7732S2 to offer substantial system level savings and performance improvement
specifically in high frequency DC-DC, motor drive and other heavy load applications on ICE, HEV and EV platforms. The AUIRL7732S2 can be utilized
together with the AUIRL7736M2 as a control/sync MOSFET pair in a buck converter topology. This MOSFET utilizes the latest processing techniques
to achieve low on-resistance and low Qg per silicon area . Additional features of this MOSFET are 175°C operating junction temperature and high
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current
automotive applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter Max. Units
V
DS
Drain-to-Source Voltage 40
V
V
GS
Gate-to-Source Voltage ±16
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 58
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 41
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 14
I
DM
Pulsed Drain Current 230
P
D
@T
C
= 25°C Power Dissipation 41
W
P
D
@T
A
= 25°C Power Dissipation 2.2
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 46
mJ
E
AS
(Tested)
Single Pulse Avalanche Energy 124
I
AR
Avalanche Current
See Fig. 16, 17, 18a, 18b
A
E
AR
Repetitive Avalanche Energy
mJ
T
P
Peak Soldering Temperature 260
°C
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
1 2015-12-11
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
Logic Level
Advanced Process Technology
Optimized for Automotive DC-DC, Motor Drive and other Heavy
Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
Automotive Qualified *
DD
G
S
S
