AUIRL1404S
AUIRL1404L
V
DSS
40V
R
DS(on)
max.
4.0m
I
D
160A
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Features
Advanced Planar Technology
Logic Level Gate Drive
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET® Power MOSFETs utilizes the latest processing
techniques to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable device
for use in Automotive and a wide variety of other applications.
1 2015-10-27
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 160
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 110
I
DM
Pulsed Drain Current 640
P
D
@T
A
= 25°C Maximum Power Dissipation 3.8
P
D
@T
C
= 25°C Maximum Power Dissipation 200
Linear Derating Factor 1.3 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 520
mJ
I
AR
Avalanche Current 95 A
E
AR
Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
W
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 0.75
°C/W
R
JA
Junction-to-Ambient (PCB Mount), D
2
Pak ––– 40
R
CS
Case-to-Sink, Flat, Greased Surface 0.50 –––
D
2
Pak
AUIRL1404S
TO-262
AUIRL1404L
S
D
G
S
D
G
D
Base part number Package Type
Standard Pack
Form Quantity
AUIRL1404L TO-262 Tube 50 AUIRL1404L
AUIRL1404S D
2
-Pak
Tube 50 AUIRL1404S
Tape and Reel Left 800 AUIRL1404STRL
Orderable Part Number
G D S
Gate Drain Source
HEXFET
®
Power MOSFET
