AUIRGPS4070D0
G C E
Gate Collector Emitter
AUTOMOTIVE GRADE
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 600 V
I
C
@ T
C
= 25°C Continuous Collector Current 240
A
I
C
@ T
C
= 100°C Continuous Collector Current 160
I
NOMINAL
Nominal Current 120
I
CM
Pulse Collector Current, V
GE
= 15V 360
I
LM
Clamped Inductive Load Current, V
GE
= 20V 480
I
F
NOMINAL
Diode Nominal Current 120
I
FM
Diode Maximum Forward Current 480
V
GE
Continuous Gate-to-Emitter Voltage ±20
V
Transient Gate-to-Emitter Voltage ±30
P
D
@ T
C
= 25°C Maximum Power Dissipation 750
W
P
D
@ T
C
= 100°C Maximum Power Dissipation 375
T
J
Operating Junction and
-55 to +175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
°C
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress rat-
ings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T
A
) is 25°C, unless
otherwise specified.
E
G
n-channel
C
Base Part Number Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRGPS4070D0 Super-247 Tube 25 AUIRGPS4070D0
1 2016-12-12
Super-247A
*Qualification standards can be found at www.infineon.com
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Thermal Resistance
Parameter
Typ. Max.
Units
R
JC
(IGBT)
Thermal Resistance Junction-to-Case (each IGBT)
––– 0.20
R
JC
(Diode)
Thermal Resistance Junction-to-Case (each Diode)
––– 0.45
R
CS
Thermal Resistance, Case-to-Sink (flat, greased surface)
0.24 –––
R
JA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
––– 40
°C/W
Features
Low V
CE (on)
Trench IGBT Technology
Low Switching Losses
6µs SCSOA
Square RBSOA
100% of the parts tested for I
LM
Positive V
CE (on)
Temperature Coefficient
Soft Recovery Co-pak Diode
Lead-Free, RoHS Compliant
Automotive Qualified *
Benefits
High Efficiency in a Wide Range of Applications
Suitable for Applications in the Low to Mid-Range Frequencies
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
Low EMI
V
CES
= 600V
I
C
= 160A
,
T
C
= 100°C
tsc 6µs, T
J(MAX)
= 175°C
V
CE(on) typ
. = 1.70V
C
E
G
C
