AUIRFZ44Z
AUIRFZ44ZS
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET® Power
MOSFET utilizes the latest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a wide
variety of other applications.
1 2017-09-25
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
HEXFET
®
Power MOSFET
V
DSS
55V
R
DS(on)
max.
13.9m
I
D
51A
TO-220AB
AUIRFZ44Z
D
2
Pak
AUIRFZ44ZS
S
D
G
S
D
G
G D S
Gate Drain Source
Base part number Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRFZ44Z TO-220 Tube 50 AUIRFZ44Z
AUIRFZ44ZS D
2
-Pak
Tube 50 AUIRFZ44ZS
Tape and Reel Left 800 AUIRFZ44ZSTRL
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 51
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (See Fig. 9) 36
I
DM
Pulsed Drain Current 200
P
D
@T
C
= 25°C Maximum Power Dissipation 80 W
Linear Derating Factor 0.53 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 86
mJ
E
AS
(tested)
Single Pulse Avalanche Energy Tested Value 105
I
AR
Avalanche Current See Fig.15,16, 12a, 12b A
E
AR
Repetitive Avalanche Energy
mJ
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 1.87
°C/W
R
CS
Case-to-Sink, Flat, Greased Surface 0.50 –––
R
JA
Junction-to-Ambient ––– 62
R
JA
Junction-to-Ambient ( PCB Mount, steady state) 40
