AUIRFZ44NS
AUIRFZ44NL
V
DSS
55V
R
DS(on)
max.
17.5m
I
D
49A
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Features
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT and dI/dT capability
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications
1 2015-10-27
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 49
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 35
I
DM
Pulsed Drain Current 160
P
D
@T
A
= 25°C Maximum Power Dissipation 3.8
W
P
D
@T
C
= 25°C Maximum Power Dissipation 94
Linear Derating Factor 0.63 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS (Thermally Limited)
Single Pulse Avalanche Energy (Thermally Limited) 150
E
AS (Tested)
Single Pulse Avalanche Energy (Tested Limited) 530
I
AR
Avalanche Current 25 A
E
AR
Repetitive Avalanche Energy 9.4 mJ
dv/dt Peak Diode Recovery 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 1.5
°C/W
R
JA
Junction-to-Ambient (PCB Mount), D
2
Pak ––– 40
D
2
Pak
AUIRFZ44NS
TO-262
AUIRFZ44NL
S
D
G
S
D
G
D
Base part number Package Type
Standard Pack
Form Quantity
AUIRFZ44NL TO-262 Tube 50 AUIRFZ44NL
AUIRFZ44NS D
2
-Pak
Tube 50 AUIRFZ44NS
Tape and Reel Left 800 AUIRFZ44NSTRL
Orderable Part Number
G D S
Gate Drain Source
HEXFET
®
Power MOSFET
