AUIRFR8401
AUIRFU8401
V
DSS
40V
R
DS(on)
typ.
3.2m
I
D (Silicon Limited)
100A
max.
4.25m
I
D (Package Limited)
100A
Features
Advanced Process Technology
New Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low on-resistance per silicon area.
This benefit combined with the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automotive and a wide variety of
other applications.
1 2016-1-28
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 100
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 71
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited) 100
I
DM
Pulsed Drain Current 400
P
D
@T
C
= 25°C Maximum Power Dissipation 79 W
Linear Derating Factor 0.53 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 1.9
°C/W
R
JA
Junction-to-Ambient ( PCB Mount) ––– 50
R
JA
Junction-to-Ambient ––– 110
D-Pak
AUIRFR8401
I-Pak
AUIRFU8401
Base part number Package Type
Standard Pack
Form Quantity
AUIRFU8401 I-Pak Tube 75 AUIRFU8401
AUIRFR8401 D-Pak
Tube 75 AUIRFR8401
Tape and Reel Left 3000 AUIRFR8401TRL
Orderable Part Number
G D S
Gate Drain Source
G
S
D
D
S
G
D
Avalanche Characteristics
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 67
E
AS
(tested)
Single Pulse Avalanche Energy (Tested Limited) 94
I
AR
Avalanche Current See Fig. 14, 15, 24a, 24b A
E
AR
Repetitive Avalanche Energy
mJ
mJ
Applications
Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid
Heavy Loads
DC-DC Converter
HEXFET
®
Power MOSFET
