AUIRFSA8409-7P
D
2
PAK-7TP
G D S
Gate Drain Source
Base Part Number Package Type
Standard Pack
Complete Part Number
Form Quantity
AUIRFSA8409-7P
D
2
PAK-7TP
Tube 50
AUIRFSA8409-7P
Tape and Reel Left 800 AUIRFSA8409-7TRL
V
DSS
40V
R
DS(on)
typ.
0.50m
max.
0.69m
I
D (Silicon Limited)
523A
I
D (Package Limited)
360A
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 523
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 370
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited) 360
I
DM
Pulsed Drain Current 1440*
P
D
@T
C
= 25°C Maximum Power Dissipation 375 W
Linear Derating Factor 2.5 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Features
Advanced Process Technology
New Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and wide variety
of other applications.
Applications
Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid
Heavy Loads
DC-DC Applications
1 2016-01-11
Avalanche Characteristics
E
AS
(Thermally Limited)
Single Pulse Avalanche Energy 743
E
AS
(Thermally Limited)
Single Pulse Avalanche Energy 1450
I
AR
Avalanche Current
See Fig. 14, 15, 24a, 24b
A
E
AR
Repetitive Avalanche Energy mJ
mJ
AUTOMOTIVE GRADE
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com