AUIRFS6535
AUIRFSL6535
V
DSS
300V
R
DS(on)
typ.
148m
I
D
19A
max.
185m
Features
Advanced Process Technology
Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other
applications.
1 2015-12-4
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 19
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 13
I
DM
Pulsed Drain Current 100
P
D
@T
C
= 25°C Maximum Power Dissipation 210 W
Linear Derating Factor 1.4 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 216
mJ
E
AS
(tested)
Single Pulse Avalanche Energy Tested Value 310
I
AR
Avalanche Current See Fig.15,16, 12a, 12b A
E
AR
Repetitive Avalanche Energy
mJ
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 0.71
°C/W
R
JA
Junction-to-Ambient ( PCB Mount, steady state) 40
D
2
Pak
AUIRFS6535
TO-262
AUIRFSL6535
S
D
G
S
D
G
D
Base part number Package Type
Standard Pack
Form Quantity
AUIRFSL6535 TO-262 Tube 50 AUIRFSL6535
AUIRFS6535 D
2
-Pak
Tube 50 AUIRFS6535
Tape and Reel Left 800 AUIRFS6535TRL
Orderable Part Number
G D S
Gate Drain Source
HEXFET
®
Power MOSFET
