AUIRFS3306
V
DSS
60V
R
DS(on)
typ.
3.3m
max.
4.2m
I
D (Silicon Limited)
160A
I
D (Package Limited)
120A
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These features
combine to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other
applications.
1 2017-10-11
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 160
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 110
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited) 120
I
DM
Pulsed Drain Current 620
P
D
@T
C
= 25°C Maximum Power Dissipation 230 W
Linear Derating Factor 1.5 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 184
mJ
I
AR
Avalanche Current
See Fig.14,15, 22a, 22b
A
E
AR
Repetitive Avalanche Energy
mJ
dv/dt Peak Diode Recovery
14
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 0.65
°C/W
R
JA
Junction-to-Ambient (PCB Mount) ––– 40
D
2
Pak
AUIRFS3004
S
D
G
Base part number Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRFS3306 D
2
-Pak
Tube 50 AUIRFS3306
Tape and Reel Left 800 AUIRFS3306TRL
G D S
Gate Drain Source
HEXFET
®
Power MOSFET
