AUIRFS3004-7P
G D S
Gate Drain Source
Base Part Number Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRFS3004-7P
Tube 50
AUIRFS3004-7P
Tape and Reel Left 800
AUIRFS3004-7PTRL
D
2
Pak 7 Pin
V
DSS
40V
R
DS(on)
typ.
0.90m
max.
1.25m
I
D (Silicon Limited)
400A
I
D (Package Limited)
240A
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition be yon d those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratin gs are measured under bo ard mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Features
Advanced Process Techn ology
Ultra Low On-Resistance
175°C Operating Temp erature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and wide variety
of other applications.
1 2015-10-20
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 400
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 280
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited) 240
I
DM
Pulsed Drain Current 1610
P
D
@T
C
= 25°C Maximum Power Dissipation 380 W
Linear Derating Factor 2.5 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 290
mJ
I
AR
Avalanche Current See Fig.14,15, 22a, 22b A
E
AR
Repetitive Avalanche Energy
mJ
dv/dt Peak Diode Recovery 2.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 0.40
°C/W
R
JA
Junction-to-Ambient ( PCB Mount) ––– 40
D
2
Pak 7 Pin
HEXFET
®
Power MOSFET
