AUIRFR9024N
AUIRFU9024N
V
DSS
-55V
R
DS(on)
max.
0.175
I
D
-11A
Features
Advanced Planar Technology
Low On-Resistance
P-Channel
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this Cellular
design of HEXFET
®
Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
1 2015-10-20
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ -10V -11
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ -10V -8
I
DM
Pulsed Drain Current -44
P
D
@T
C
= 25°C Maximum Power Dissipation 38 W
Linear Derating Factor 0.30 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 62
mJ
I
AR
Avalanche Current -6.6 A
E
AR
Repetitive Avalanche Energy 3.8 mJ
dv/dt Peak Diode Recovery dv/dt -10 V/ns
T
J
Operating Junction and -55 to + 150
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 3.3
°C/W
R
JA
Junction-to-Ambient ( PCB Mount) ––– 50
R
JA
Junction-to-Ambient ––– 110
D-Pak
AUIRFR9024N
I-Pak
AUIRFU9024N
Base part number Package Type
Standard Pack
Form Quantity
AUIRFU9024N
I-Pak
Tube 75 AUIRFU9024N
AUIRFR9024N D-Pak
Tube 75 AUIRFR9024N
Tape and Reel Left 3000 AUIRFR9024NTRL
Orderable Part Number
G D S
Gate Drain Source
G
S
D
D
S
G
D
HEXFET
®
Power MOSFET
