AUIRFR5305
AUIRFU5305
V
DSS
-55V
R
DS(on)
max.
0.065
I
D
-31A
Features
Advanced Planar Technology
Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this Cellular
Planar design of HEXFET
®
Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
1 2015-10-12
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ -10V -31
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ -10V -22
I
DM
Pulsed Drain Current -110
P
D
@T
C
= 25°C Maximum Power Dissipation 110 W
Linear Derating Factor 0.71 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 280
mJ
I
AR
Avalanche Current -16 A
E
AR
Repetitive Avalanche Energy 11 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 1.4
°C/W
R
JA
Junction-to-Ambient ( PCB Mount) ––– 50
R
JA
Junction-to-Ambient ––– 110
D-Pak
AUIRFR5305
I-Pak
AUIRFU5305
Base part number Package Type
Standard Pack
Form Quantity
AUIRFU5305
I-Pak
Tube 75 AUIRFU5305
AUIRFR5305 D-Pak
Tube 75 AUIRFR5305
Tape and Reel Left 3000 AUIRFR5305TRL
Orderable Part Number
G D S
Gate Drain Source
G
S
D
D
S
G
D
