AUIRFR4620
V
DSS
200V
R
DS(on)
typ.
64m
max.
78m
I
D
24A
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
1 2015-12-1
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 24
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 17
I
DM
Pulsed Drain Current 100
P
D
@T
C
= 25°C Maximum Power Dissipation 144 W
Linear Derating Factor 0.96 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 113
mJ
I
AR
Avalanche Current See Fig. 14, 15, 22a, 22b A
E
AR
Repetitive Avalanche Energy
mJ
dv/dt Pead Diode Recovery dv/dt 54 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 1.045
°C/W
R
JA
Junction-to-Ambient ( PCB Mount) ––– 50
R
JA
Junction-to-Ambient ––– 110
D-Pak
AUIRFR4620
Base part number Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRFR4620 D-Pak
Tube 75 AUIRFR4620
Tape and Reel Left 3000 AUIRFR4620TRL
G D S
Gate Drain Source
S
G
D
HEXFET
®
Power MOSFET
