AUIRFR120Z
AUIRFU120Z
V
DSS
100V
R
DS(on)
typ.
150m
I
D
8.7A
max.
190m
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
1 2015-10-12
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 8.7
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 6.1
I
DM
Pulsed Drain Current 35
P
D
@T
C
= 25°C Maximum Power Dissipation 35 W
Linear Derating Factor 0.23 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 18
E
AS
(Tested)
Single Pulse Avalanche Energy Tested Value 20
I
AR
Avalanche Current See Fig.15,16, 12a, 12b A
E
AR
Repetitive Avalanche Energy
mJ
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
mJ
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 4.28
°C/W
R
JA
Junction-to-Ambient ( PCB Mount) ––– 50
R
JA
Junction-to-Ambient ––– 110
D-Pak
AUIRFR120Z
I-Pak
AUIRFU120Z
Base part number Package Type
Standard Pack
Form Quantity
AUIRFU120Z
I-Pak
Tube 75 AUIRFU120Z
AUIRFR120Z D-Pak
Tube 75 AUIRFR120Z
Tape and Reel Left 3000 AUIRFR120ZTRL
Orderable Part Number
G D S
Gate Drain Source
G
S
D
D
S
G
D
