AUIRFP4110
HEXFET
®
Power MOSFET
D
S
G
G D S
Gate Drain Source
Features
Advanced Process Technology
Ultra Low On-Resistance
Enhanced dV/dT and dI/dT capability
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide
variety of other applications.
Base part number Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRFP4110 TO-247AC Tube 25 AUIRFP4110
V
DSS
100V
R
DS(on) typ.
3.7m
max
4.5m
I
D (Silicon Limited)
180A
I
D (Package Limited)
120A
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 180
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 130
I
DM
Pulsed Drain Current 670
P
D
@T
C
= 25°C Maximum Power Dissipation 370 W
Linear Derating Factor 2.5 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS (Thermally limited)
Single Pulse Avalanche Energy
190
mJ
T
J
T
STG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Typ. Max. Units
R
JC
Junction-to-Case
––– 0.402
°C/W
R
CS
Case-to-Sink, Flat Greased Surface
0.24 –––
R
JA
Junction-to-Ambient
––– 40
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited) 120
I
AR
Avalanche Current
108
A
E
AR
Repetitive Avalanche Energy 37 mJ
dv/dt Peak Diode Recovery 5.3 V/ns
AUTOMOTIVE GRADE
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
TO-247AC
AUIRFP4110
S
D
G
1 2017-09-15
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com