AUIRFP2602
V
(BR)DSS
24V
R
DS(on)
typ.
1.25mΩ
max.
1.6mΩ
I
D (Silicon Limited)
380A
I
D (Package Limited)
180A
Features
• Advanced Process Techn ology
• Low On-Resistance
• 175°C Operating Temp erature
• Fast Switching
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free, RoHS Compliant
• Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other
applications.
1 2016-2-16
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 380
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 270
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited) 180
I
DM
Pulsed Drain Current 1580
P
D
@T
C
= 25°C Maximum Power Dissipation 380 W
Linear Derating Factor 2.5 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 400
E
AS (Tested)
Single Pulse Avalanche Energy Tested Value 1011
I
AR
Avalanche Current See Fig.14,15, 17a, 17b A
E
AR
Repetitive Avalanche Energy
mJ
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
mJ
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition be yon d those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratin gs are measured under bo ard mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case ––– 0.40
°C/W
R
θ
CS
Case-to-Sink, Flat, Greased Surface 0.24 –––
R
θ
JA
Junction-to-Ambient ––– 40
TO-247AC
AUIRFP2602
S
D
G
Base part number Package Type
Standard Pack
Form Quantity
AUIRFP2602 TO-247AC Tube 25 AUIRFP2602
Orderable Part Number
G D S
Gate Drain Source
