AUIRFN8405
Base Part Number Package Type
Standard Pack
Form Quantity
AUIRFN8405
PQFN 5mm x 6mm Tape and Reel 4000 AUIRFN8405TR
Orderable Part Number
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
AUTOMOTIVE GRADE
PQFN 5X6 mm
G D S
Gate Drain Source
V
DSS
40V
R
DS(on)
typ.
1.6m
I
D (Silicon Limited)
187A
max
2.0m
I
D (Package Limited)
95A
Applications
Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid
Heavy Loads
DC-DC Converter
Parameter Max. Units
I
D
@ T
C(Bottom)
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 187
A
I
D
@ T
C(Bottom)
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 132
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited) 95
I
DM
Pulsed Drain Current 670
P
D
@T
A
= 25°C Power Dissipation 3.3
W
P
D
@T
C(Bottom)
= 25°C Power Dissipation 136
Linear Derating Factor 0.022 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
T
J
Operating Junction and -55 to + 175
°C
T
STG
Storage Temperature Range
HEXFET
®
POWER MOSFET
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET
®
Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These features
combine to make this product an extremely efficient and
reliable device for use in Automotive and wide variety of
other applications.
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 3, 2014
Avalanche Characteristics
E
AS(Thermally Limited)
Single Pulse Avalanche Energy 190
E
AS
(Tested)
Single Pulse Avalanche Energy 365
I
AR
Avalanche Current
See Fig. 14, 15, 22a, 22b
A
E
AR
Repetitive Avalanche Energy
mJ
mJ
