AUIRFN8401
Base Part Number Package Type Standard Pack Orderable Part Number
Form Quantity
AUIRFN8401
PQFN 5mm x 6mm Tape and Reel 4000 AUIRFN8401TR
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
AUTOMOTIVE GRADE
PQFN 5X6 mm
G D S
Gate Drain Source
V
DSS
40V
R
DS(on)
typ.
3.6m
max
4.6m
I
D (Silicon Limited)
84A
Applications
Motor Control
Reverse Battery Protection
Heavy Loads
Parameter Max. Units
I
D
@ T
C(Bottom)
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 84
A
I
D
@ T
C(Bottom)
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 59
I
DM
Pulsed Drain Current 336
P
D
@T
A
= 25°C Power Dissipation 4.2
W
P
D
@T
C(Bottom)
= 25°C Power Dissipation 63
Linear Derating Factor 0.028 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 69
E
AS
(Tested)
Single Pulse Avalanche Energy 93
I
AR
Avalanche Current
See Fig. 14, 15, 22a, 22b
A
E
AR
Repetitive Avalanche Energy
mJ
T
J
Operating Junction and -55 to + 175
°C
T
STG
Storage Temperature Range
mJ
HEXFET
®
POWER MOSFET
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET
®
Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These features
combine to make this product an extremely efficient and
reliable device for use in Automotive and wide variety of
other applications.
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 14, 2014
