AUIRFB4610
AUIRFS4610
V
DSS
100V
R
DS(on)
typ.
11m
max.
14m
I
D
73A
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Features
Advanced Process Technology
Ultra Low On-Resistance
Enhanced dV/dT and dI/dT capability
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications
1 2015-10-27
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 73
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 52
I
DM
Pulsed Drain Current 290
P
D
@T
C
= 25°C Maximum Power Dissipation 190 W
Linear Derating Factor 1.3 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 370
mJ
I
AR
Avalanche Current See Fig.14,15, 22a, 22b A
E
AR
Repetitive Avalanche Energy
mJ
dv/dt Peak Diode Recovery 7.6 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 0.77
°C/W
R
JA
Junction-to-Ambient ( PCB Mount, steady state) 40
R
JA
Junction-to-Ambient ––– 62
R
CS
Case-to-Sink, Flat, Greased Surface 0.50 –––
TO-220
AUIRFB4610
D
2
Pak
AUIRFS4610
S
D
G
Base part number Package Type
Standard Pack
Form Quantity
AUIRFB4610 TO-220 Tube 50 AUIRFB4610
AUIRFS4610 D
2
-Pak
Tube 50 AUIRFS4610
Tape and Reel Left 800 AUIRFS4610TRL
Orderable Part Number
G D S
Gate Drain Source
HEXFET
®
Power MOSFET
S
D
G
D
