AUIRF9952Q
N-CH P-CH
V
DSS
30V -30V
R
DS(on)
max.
0.10 0.25
I
D
3.5A -2.3A
Description
Specifically designed for Automotive applications, this cellular design of
HEXFET® Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automotive and a wide
variety of other applications.
Features
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dual N and P Channel MOSFET
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
Full Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
1 2015-10-5
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter
Max.
Units
N-Channel P-Channel
I
D
@ T
A
= 25°C 10 Sec. Pulsed Drain Current, V
GS
@ 10V 3.5
-2.3
A
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V 2.8
-1.8
I
DM
Pulsed Drain Current 16
-10
P
D
@T
A
= 25°C Maximum Power Dissipation
2.0
W
P
D
@T
A
= 70°C Maximum Power Dissipation
1.3
Linear Derating Factor
0.016
W/°C
V
GS
Gate-to-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 44
57
mJ
I
AR
Avalanche Current 2.0
-1.3
A
E
AR
Repetitive Avalanche Energy mJ
dv/dt Peak Diode Recovery dv/dt 5.0
-5.0
V/ns
T
J
Operating Junction and
-55 to + 150 °C
T
STG
Storage Temperature Range
0.25
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
°C/W
R
JA
Junction-to-Ambient ( PCB Mount, steady state) ––– 62.5
SO-8
AUIRF9952Q
Base part number Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRF952Q SO-8 Tape and Reel 4000 AUIRF9952QTR
G D S
Gate Drain Source
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
P-CHANNEL MOSFET
N-CHANNEL MOSFET
