AUIRF7805Q
V
DSS
30V
R
DS(on)
typ.
9.2m
I
D
13A
max.
11m
Description
Specifically designed for Automotive applications, these HEXFET®
Power MOSFET's in a Dual SO-8 package utilize the lastest
processing techniques to achieve extremely low on-resistance per
silicon area. Additional features of these Automotive qualified
HEXFET Power MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a
wide variety of other applications.
The efficient SO-8 package provides enhanced thermal characteristics
and dual MOSFET die capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
Features
Advanced Planar Technology
Low On-Resistance
Logic Level
N Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free, RoHS Compliant
Automotive Qualified *
1 2015-10-5
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
V
DS
Drain-Source Voltage 30
V
GS
Gate-to-Source Voltage ± 12
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V 13
A
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V 10
I
DM
Pulsed Drain Current 100
P
D
@T
A
= 25°C Maximum Power Dissipation 2.5
W
P
D
@T
A
= 70°C Maximum Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
T
J
Operating Junction and -55 to + 150
°C
T
STG
Storage Temperature Range
V
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
°C/W
R
JL
Junction-to-Drain Lead ––– 20
R
JA
Junction-to-Ambient ––– 50
SO-8
AUIRF7805Q
Base part number Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRF7805Q SO-8 Tape and Reel 4000 AUIRF7805QTR
G D S
Gate Drain Source
Top View
8
1
2
3
4
5
6
7
D
D
D
DG
S
A
S
S
