AUIRF7665S2TR
Base Part Number Package Type
Standard Pack
Form Quantity
AUIRF7665S2
DirectFET Small Can
Tape and Reel 4800
AUIRF7665S2TR
Orderable Part Number
AUTOMOTIVE GRADE
V
(BR)DSS
100V
R
DS(on)
typ.
51m
R
G (typical)
3.5
max.
62m
Q
g (typical)
8.3nC
DirectFET
®
ISOMETRIC
SB
Automotive DirectFET
®
Power MOSFET
Applicable DirectFET
®
Outline and Substrate Outline
SB SC M2 M4 L4 L6 L8
Description
The AUIRF7665S2 combines the latest Automotive HEXFET
®
Power MOSFET Silicon technology with the advanced DirectFET
®
packaging platform to
produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET
®
package is compatible with existing layout
geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application
note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
®
package allows dual sided cooling to maximize
thermal transfer in automotive power systems.
This HEXFET
®
Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D audio
amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET
®
packaging platform offers low parasitic inductance and
resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the voltage ringing that
accompanies current transients.
These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter Max. Units
V
DS
Drain-to-Source Voltage 100
V
V
GS
Gate-to-Source Voltage ±20
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 14.4
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 10.2
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 4.1
I
DM
Pulsed Drain Current 58
P
D
@T
C
= 25°C Power Dissipation 30
W
P
D
@T
A
= 25°C Power Dissipation 2.4
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 37
mJ
E
AS
(Tested)
Single Pulse Avalanche Energy 56
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
T
P
Peak Soldering Temperature 270
°C
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
See Fig. 16, 17, 18a, 18b
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited) 77
1 2015-10-5
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
Advanced Process Technology
Optimized for Class D Audio Amplifier Applications
Low Rds(on) for Improved Efficiency
Low Qg for Better THD and Improved Efficiency
Low Qrr for Better THD and Lower EMI
Low Parasitic Inductance for Reduced Ringing and Lower EMI
Delivers up to 100W per Channel into 8 with No Heatsink
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
Automotive Qualified *
