AUIRF7478Q
V
DSS
60V
R
DS(on)
typ.
20m
I
D
7.0A
max.
26m
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
Features
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
1 2015-9-30
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
V
DS
Drain-Source Voltage 60
V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V 7.0
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V 5.6
I
DM
Pulsed Drain Current 56
P
D
@T
A
= 25°C Maximum Power Dissipation 2.5 W
Linear Derating Factor 0.02 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 140
mJ
I
AR
Avalanche Current 4.2 A
dv/dt Peak Diode Recovery dv/dt 3.7 V/ns
T
J
Operating Junction and -55 to + 150
°C
T
STG
Storage Temperature Range
A
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
°C/W
R
JL
Junction-to-Drain Lead ––– 20
R
JA
Junction-to-Ambient ––– 50
SO-8
AUIRF7478Q
Base part number Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRF7478Q SO-8 Tape and Reel 4000 AUIRF7478QTR
G D S
Gate Drain Source
Top View
8
1
2
3
4
5
6
7
D
D
D
DG
S
A
S
S