AUIRF7343Q
V
DSS
55V
R
DS(on)
typ.
0.043
I
D
4.7A
-55V
0.095
-3.4A
N-CH P-CH
max.
0.050 0.105
Description
Specifically designed for Automotive applications, these HEXFET® Power
MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to
achieve extremely low on-resistance per silicon area. Additional features of
these Automotive qualified HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and improved repetitive
avalanche rating. These benefits combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a wide
variety of other applications.
The efficient SO-8 package provides enhanced thermal characteristics and
dual MOSFET die capability making it ideal in a variety of power applications.
This dual, surface mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
Features
Advanced Planar Technology
Ultra Low On-Resistance
Logic Level Gate Drive
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free, RoHS Compliant
Automotive Qualified *
1 2015-9-30
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter
Max.
Units
N-Channel P-Channel
V
DS
Drain-Source Voltage 55
-55 V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V 4.7
-3.4
A
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V 3.8
-2.7
I
DM
Pulsed Drain Current 38
-27
P
D
@T
A
= 25°C Maximum Power Dissipation
2.0
W
P
D
@T
A
= 70°C Maximum Power Dissipation
1.3
E
AS
Single Pulse Avalanche Energy (Thermally Limited)
72
114
mJ
I
AR
Avalanche Current
4.7
-3.4
A
E
AR
Repetitive Avalanche Energy
0.20
mJ
V
GS
Gate-to-Source Voltage
± 20
V
dv/dt Peak Diode Recovery dv/dt 5.0
-5.0
V/ns
T
J
Operating Junction and
-55 to + 150 °C
T
STG
Storage Temperature Range
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
°C/W
R
JA
Junction-to-Ambient ( PCB Mount, steady state) ––– 62.5
SO-8
AUIRF7343Q
Base part number Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRF7343Q SO-8 Tape and Reel 4000 AUIRF7343QTR
G D S
Gate Drain Source
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
P-CHANNEL MOSFET
N-CHANNEL MOSFET
