AUIRF7342Q
V
DSS
-55V
R
DS(on)
max.
0.105
I
D
-3.4A
Description
Specifically designed for Automotive applications, this cellular design of
HEXFET® Power MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This benefit combined
with the fast switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in Automotive
and a wide variety of other applications.
Features
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dual P Channel MOSFET
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free, RoHS Compliant
Automotive Qualified *
1 2015-9-30
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
V
DS
Drain-Source Voltage -55
V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ -10V -3.4
A
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ -10V -2.7
I
DM
Pulsed Drain Current -27
P
D
@T
A
= 25°C Maximum Power Dissipation 2.0
W
P
D
@T
A
= 70°C Maximum Power Dissipation 1.3
Linear Dearating Factor 0.016
mW°/C
V
GS
Gate-to-Source Voltage ± 20
V
V
GSM
Gate-to-Source Voltage Single Pulse tp < 10µs 30
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 114
mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
Operating Junction and -55 to + 150
°C
T
STG
Storage Temperature Range
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
°C/W
R
JA
Junction-to-Ambient ––– 62.5
SO-8
AUIRF7342Q
Base part number Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRF7342Q SO-8
Tape and Reel 4000 AUIRF7342QTR
G D S
Gate Drain Source
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
