AUIRF7341Q
V
DSS
55V
R
DS(on)
typ.
0.043
I
D
5.1A
max.
0.050
Description
Specifically designed for Automotive applications, these HEXFET® Power
MOSFET's in a Dual SO-8 package utilize the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of these Automotive qualified HEXFET Power
MOSFET's are a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal characteristics and
dual MOSFET die capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
Features
Advanced Planar Technology
Ultra Low On-Resistance
Logic Level Gate Drive
Dual N Channel MOSFET
Surface Mount
Available in Tape & Reel
175°C Operating Temperature
Lead-Free, RoHS Compliant
Automotive Qualified *
1 2015-9-30
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
V
DS
Drain-Source Voltage 55
V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V 5.1
A
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V 4.2
I
DM
Pulsed Drain Current 42
P
D
@T
A
= 25°C Maximum Power Dissipation 2.4
P
D
@T
A
= 70°C Maximum Power Dissipation 1.7
Linear Derating Factor 16 mW/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 140
mJ
I
AR
Avalanche Current 5.1 A
E
AR
Repetitive Avalanche Energy See Fig.17, 18, 15a, 15b mJ
T
J
Operating Junction and -55 to + 175
°C
T
STG
Storage Temperature Range
W
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
°C/W
R
JA
Junction-to-Ambient ––– 62.5
SO-8
AUIRF7341Q
Base part number Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRF7341Q SO-8 Tape and Reel 4000 AUIRF7341QTR
G D S
Gate Drain Source
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7