AUIRF7319Q
V
DSS
30V
R
DS(on)
typ.
0.023
I
D
6.5A
-30V
0.042
-4.9A
N-CH P-CH
max.
0.029 0.058
Description
Specifically designed for Automotive applications, these HEXFET®
Power MOSFET's in a Dual SO-8 package utilize the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of these Automotive qualified HEXFET Power
MOSFET's are a 150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal characteristics
and dual MOSFET die capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
Features
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dual N and P Channel MOSFET
Surface Mount
Fully Avalanche Rated
Lead-Free, RoHS Compliant
Automotive Qualified *
1 2015-9-30
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter
Max.
Units
N-Channel P-Channel
V
DS
Drain-Source Voltage 30
-30 V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V 6.5
-4.9
A
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V 5.2
-3.9
I
DM
Pulsed Drain Current 30
-30
I
S
Continuous Source Current (Diode Conduction) 2.5
-2.5
P
D
@T
A
= 25°C Maximum Power Dissipation
2.0
W
P
D
@T
A
= 70°C Maximum Power Dissipation
1.3
E
AS
Single Pulse Avalanche Energy (Thermally Limited)
82
140
mJ
I
AR
Avalanche Current
4.0
-2.8
A
E
AR
Repetitive Avalanche Energy mJ
V
GS
Gate-to-Source Voltage
± 20
V
dv/dt Peak Diode Recovery dv/dt 5.0
-5.0
V/ns
T
J
Operating Junction and
-55 to + 150 °C
T
STG
Storage Temperature Range
0.20
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
°C/W
R
JA
Junction-to-Ambient ( PCB Mount, steady state) ––– 62.5
SO-8
AUIRF7319Q
Base part number Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRF7319Q SO-8 Tape and Reel 4000 AUIRF7319QTR
G D S
Gate Drain Source
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
P-CHANNEL MOSFET
N-CHANNEL MOSFET
