AUIRF7316Q
V
DSS
-30V
R
DS(on)
typ.
0.042
I
D
-4.9A
max.
0.058
Description
Specifically designed for Automotive applications, these HEXFET®
Power MOSFET's in a Dual SO-8 package utilize the lastest
processing techniques to achieve extremely low on-resistance per
silicon area. Additional features of these Automotive qualified
HEXFET Power MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a
wide variety of other applications.
The efficient SO-8 package provides enhanced thermal characteristics
and dual MOSFET die capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
Features
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dual P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free, RoHS Compliant
Automotive Qualified *
1 2015-9-30
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
V
DS
Drain-Source Voltage -30
V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V -4.9
A
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V -3.9
I
DM
Pulsed Drain Current -30
I
S
Continuous Source Current (Diode Conduction) -2.5
P
D
@T
A
= 25°C Maximum Power Dissipation 2.0
P
D
@T
A
= 70°C Maximum Power Dissipation 1.3
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 140
mJ
I
AR
Avalanche Current -2.8 A
E
AR
Repetitive Avalanche Energy 0.20 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J
Operating Junction and -55 to + 150
°C
T
STG
Storage Temperature Range
W
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
°C/W
R
JA
Junction-to-Ambient ––– 62.5
SO-8
AUIRF7316Q
Base part number Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRF7316Q SO-8 Tape and Reel 4000 AUIRF7316QTR
G D S
Gate Drain Source
D1
D1
D
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
