AUIRF7304Q
V
DSS
-20V
R
DS(on)
max.
0.090
I
D
-4.3A
Description
Specifically designed for Automotive applications, this
cellular design of HEXFET® Power MOSFETs utilizes the
latest processing techniques to achieve low on-resistance
per silicon area. This benefit combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
Features
Advanced Planar Technology
Low On-Resistance
Dual P Channel MOSFET
Dynamic dv/dt Rating
Logic Level
150°C Operating Temperature
Fast Switching
Lead-Free, RoHS Compliant
Automotive Qualified *
1 2015-11-16
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ -4.5V -4.7
A
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ -4.5V -4.3
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ -4.5V -3.4
I
DM
Pulsed Drain Current -17
P
D
@T
A
= 25°C Maximum Power Dissipation 2.0
W
Linear Derating Factor 0.016
V
GS
Gate-to-Source Voltage ± 12 V
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J
Operating Junction and -55 to + 150
°C
T
STG
Storage Temperature Range
W°/C
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
°C/W
R
JA
Junction-to-Ambient ––– 62.5
SO-8
AUIRF7304Q
Base part number Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRF7304Q SO-8
Tape and Reel 4000 AUIRF7304QTR
G D S
Gate Drain Source
HEXFET
®
Power MOSFET
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
