AUIRF6215S
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Features
Advanced Planar Technology
Low On-Resistance
P-Channel MOSFET
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this cellular design of
HEXFET® Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit combined with the
fast switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and a wide variety of other
applications.
1 2015-11-13
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
HEXFET
®
Power MOSFET
V
DSS
-150V
R
DS(on)
max.
0.29
I
D
-13A
D
2
Pak
AUIRF6215S
S
D
G
G D S
Gate Drain Source
Base part number Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRF6215S D
2
-Pak
Tube 50 AUIRF6215S
Tape and Reel Left 800 AUIRF6215STRL
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ -10V -13
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ -10V -9.0
I
DM
Pulsed Drain Current -44
P
D
@T
A
= 25°C Maximum Power Dissipation 3.8
P
D
@T
C
= 25°C Maximum Power Dissipation 110
Linear Derating Factor 0.71 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 310
mJ
I
AR
Avalanche Current -6.6 A
E
AR
Repetitive Avalanche Energy 11 mJ
dv/dt Peak Diode Recovery -5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
W
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 1.4
°C/W
R
JA
Junction-to-Ambient ( PCB Mount, steady state) 40
