AUIRF5210S
V
DSS
-100V
R
DS(on)
max.
60m
I
D
-38A
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications..
Features
Advanced Process Technology
P-Channel MOSFET
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
1 2015-9-30
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ -10V -38
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ -10V -24
I
DM
Pulsed Drain Current -140
P
D
@T
A
= 25°C Maximum Power Dissipation 3.1
W
P
D
@T
C
= 25°C Maximum Power Dissipation 170
Linear Derating Factor 1.3 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 120
mJ
I
AR
Avalanche Current -23 A
E
AR
Repetitive Avalanche Energy 17 mJ
T
J
Operating Junction and -55 to + 150
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
dv/dt Peak Diode Recovery dv./dt -7.4 V/ns
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 0.75
°C/W
R
JA
Junction-to-Ambient ( PCB Mount, steady state) 40
D
2
Pak
AUIRF5210S
S
D
G
Base part number Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRF5210S D
2
-Pak
Tube 50 AUIRF5210S
Tape and Reel Left 800 AUIRF5210STRL
G D S
Gate Drain Source