AUIRF3315S
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Features
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this cellular design of
HEXFET® Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit combined with the
fast switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and a wide variety of other
applications.
1 2015-11-13
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
HEXFET
®
Power MOSFET
V
DSS
150V
R
DS(on)
max.
82m
I
D
21A
D
2
Pak
AUIRF3315S
S
D
G
G D S
Gate Drain Source
Base part number Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRF3315S D
2
-Pak
Tube 50 AUIRF3315S
Tape and Reel Left 800 AUIRF3315STRL
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 21
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 15
I
DM
Pulsed Drain Current 84
P
D
@T
A
= 25°C Maximum Power Dissipation 3.8
P
D
@T
C
= 25°C Maximum Power Dissipation 94
Linear Derating Factor 0.63 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 350
mJ
I
AR
Avalanche Current 12 A
E
AR
Repetitive Avalanche Energy 9.4 mJ
dv/dt Peak Diode Recovery 2.5 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
W
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 1.6
°C/W
R
JA
Junction-to-Ambient ( PCB Mount, steady state) 40
