AUIRF1404Z
AUIRF1404ZS
AUIRF1404ZL
V
DSS
40V
R
DS(on)
max.
3.7m
I
D (Silicon Limited)
180A
I
D (Package Limited)
160A
Features
Advanced Process Techn ology
Ultra Low On-Resistance
175°C Operating Temp erature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficien t
and reliable device for use in Automotive applications and a wide
variety of other applications.
1 2015-11-11
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 180
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 120
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited) 160
I
DM
Pulsed Drain Current 710
P
D
@T
C
= 25°C Maximum Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 330
mJ
E
AS
(tested)
Single Pulse Avalanche Energy Tested Value 480
I
AR
Avalanche Current See Fig.15,16, 12a, 12b A
E
AR
Repetitive Avalanche Energy
mJ
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond thos e indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended peri ods may affect device reliabilit y. The thermal resistance
and power dissipation ratin gs are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 0.75
°C/W
R
CS
Case-to-Sink, Flat, Greased Surface 0.50 –––
R
JA
Junction-to-Ambient ––– 62
R
JA
Junction-to-Ambient ( PCB Mount, steady state) 40
TO-220AB
AUIRF1404Z
D
2
Pak
AUIRF1404ZS
TO-262
AUIRF1404ZL
S
D
G
S
D
G
S
D
G
D
Base part number Package Type
Standard Pack
Form Quantity
AUIRF1404Z TO-220 Tube 50 AUIRF1404Z
AUIRF1404ZL TO-262 Tube 50 AUIRF1404ZL
AUIRF1404ZS D
2
-Pak
Tube 50 AUIRF1404ZS
Tape and Reel Left 800 AUIRF1404ZSTRL
Orderable Part Numb e r
G D S
Gate Drain Source
HEXFET
®
Power MOSFET
