AUIRF1404S
AUIRF1404L
V
DSS
40V
R
DS(on)
typ.
3.5m
max.
4.0m
I
D (Silicon Limited)
162A
I
D (Package Limited)
75A
Features
Advanced Planar Technology
Dynamic dv/dt Rating
175°C Operating Temp erature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this Stripe
Planar design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety of other
applications.
1 2015-11-11
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 162
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 115
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited) 75
I
DM
Pulsed Drain Current 650
P
D
@T
A
= 25°C Maximum Power Dissipation 3.8
W
P
D
@T
C
= 25°C Maximum Power Dissipation 200
Linear Derating Factor 1.3 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 519
mJ
I
AR
Avalanche Current 95 A
E
AR
Repetitive Avalanche Energy 20 mJ
Dv/dt Peak Diode Recovery 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case) 300
°C
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition be yon d those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratin gs are measured under bo ard mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 0.75
°C/W
R
JA
Junction-to-Ambient ( PCB Mount, steady state) 40
D
2
Pak
AUIRF1404S
TO-262
AUIRF1404L
S
D
G
S
D
G
D
Base part number Package Type
Standard Pack
Form Quantity
AUIRF1404L TO-262 Tube 50 AUIRF1404L
AUIRF1404S D
2
-Pak
Tube 50 AUIRF1404S
Tape and Reel Left 800 AUIRF1404STRL
Orderable Part Number
G D S
Gate Drain Source
HEXFET
®
Power MOSFET
